深圳市海普森科技有限公司

Features
• SOT-23 Plastic-Encapsulate Transistors
• Capable of 0.3Watts(Tamb=25OC) of Power Dissipation.
• Collector-current 0.5A
• Collector-base Voltage 40V
• Operating and storage junction temperature range: -55OC to +150OC
• Marking : 2T1
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARA*ERISTICS
V(BR)CBO Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
40 --- Vdc
V(BR)CEO Collector-Emitter Breakdown Voltage
(IC=0.1mAdc, IB=0)
25 --- Vdc
V(BR)EBO Emitter-Base Breakdown Voltage
(IE=100uAdc, IC=0)
5.0 --- Vdc
ICBO Collector Cutoff Current
(VCB=40Vdc, IE=0)
--- 0.1 uAdc
ICEO Collector Cutoff Current
(VCE=20Vdc, IB=0)
--- 0.1 uAdc
IEBO Emitter Cutoff Current
(VEB=5.0Vdc, IC=0)
--- 0.1 uAdc
ON CHARA*ERISTICS
hFE(1) DC Current Gain
(IC=50mAdc, VCE=1.0Vdc)
120 350 ---
hFE(2) DCCurrent Gain
(IC=500mAdc, VCE=1.0Vdc)
40 --- ---
VCE(sat) Collector-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc)
--- 0.6 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc)
--- 1.2 Vdc
VEB Base- Emitter Voltage
(IE=100mAdc)
--- 1.4 Vdc
SMALL-SIGNAL CHARA*ERISTICS
fT Transistor Frequency
(IC=20mAdc, VCE=6.0Vdc, f=30MHz)
150 --- MHz
CLASSIFICATION OF HFE (1)
Rank L
Range 120-200
PNP Silicon
Plastic-Encapsulate
Transistor
SOT-23
Suggested Solder
Pad Layout
DIMENSIONS
INCH* MM
DIM MIN MAX MIN MAX *TE
A .110 .120 2.80 3.04
B .083 .098 2.10 2.64
C .047 .055 1.20 1.40
D .035 .041 .89 1.03
E .070 .081 1.78 2.05
F .018 .024 .45 .60
G .0005 .0039 .013 .100
H .035 .044 .89 1.12
J .003 .007 .085 .180
K .015 .020 .37 .51
A
C B
D
E
G H J
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
K
F
Revision: A 2011/01/01

 
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